Qi Guo

Silicon Carbide Power Devices R&D engineer, MEng in Material Science

I am a R&D engineer working on the development of wide-bandgap SiC power devices.

👨‍🎓 Biography

👩‍💼 Professional Experience

Silicon Carbide Power Devices R&D Engineer

• Participated in the formulation of the product's Qual plan and the product development and project management of SiC power chip products, and was responsible for the writing of technical reports and datasheets.

• Participated in R&D of New X-tal SiC 1200V SBD (VF=1.42V), and SiC 650V SBD made (VF=1.29V), and 40mOhm SiC 650V MOSFET for 6-inch wafers. Formulation of relevant design documents, process documents, packaging, and testing documents for SiC power device products.

• Responsible for device simulation, layout design, process formulation, and optimization of SiC power devices. The formulation of wafer benchmark test and CP data analysis for SIC devices, DOE design of SiC process docking in FAB factory, and optimization of 650V 20A SBD MPS process.

👩‍💻 Research Experience

Enhanced Heat Dissipation in Gallium Nitride-Based Light-Emitting Diodes by Piezo-phototronic Effect

• Fabricated the GaN-based MQW HP-LEDs with micro-nano processes from epitaxial wafers and performed high-resolution infrared thermography to measure the self-heating temperature under external strains.

• The temperature rise caused by the self-heating effect is reduced by 47.62% under 0.1% external strain, which is attributed to the enhanced competitiveness of radiative recombination against nonradiative recombination due to the piezo-phototronic effect.

• This work has been published in peer-reviewed journals Nano Letters funded through National Natural Science Foundation.

Magnetosensory Power Devices based on AlGaN/GaN Heterojunctions for Interactive Electronics

• Designed a novel magnetosensory power device based on AlGaN/AlN/GaN heterojunction. Its output power can be significantly modulated by the external magnetic field.

• Fabricated the device with micro-nano processes from epitaxial wafers. The 2DEG concentration is 1.2E13/cm2, and the maximum output power density reaches 8.6 KW/cm2. Under the external magnetic field of 0 - 400 mT, the output power density of MPD increases from 1.804 KW/cm2 to 1.894 KW/cm2 at Vgs = -5 V.

• This work has been published in the peer-reviewed journal Advanced Electronic Materials funded through National Natural Science Foundation

Temperature-Dependent Study on AlGaN-based Deep Ultraviolet Light-Emitting Diodes for the Origin of High Ideality Factor

• Developed a simple and convenient method to study the behavior of a 280 nm AlGaN-based DUV LED, obtaining the electrical, optical, and thermal properties within one measurement.

• The light output power and wall-plug efficiency of the AlGaN-based DUV LED are strongly affected by device temperature, ideality factor (β), and series resistance (Rs). β decreases from 9.3 to 8.1 at 40 mA when the temperature increases from 302 K to 317 K.

• Performed the TCAD simulation with Crosslight APSYS and revealed that the high potential barriers inside the device and the hole concentration in p-type layers are the two key factors for the high value of the ideality factor.

• This work has been published in peer-reviewed journals AIP Advances funded through National Natural Science Foundation.

📚 Publications

🎓 Education

University of Chinese Academy of Sciences

Guangxi University

Anhui University of Technology